IRG4IBC20KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

11.5A

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

2.8V

Weight :

2.299997g

Gate-Emitter Voltage-Max :

20V

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Test Condition :

480V, 9A, 50 Ω, 15V

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Turn On Time :

88 ns

Transistor Element Material :

SILICON

Gate Charge :

34nC

Td (on/off) @ 25°C :

54ns/180ns

Mount :

Through Hole

Voltage - Rated DC :

600V

Packaging :

Tube

Mounting Type :

Through Hole

Number of Pins :

3

Rise Time :

34ns

Turn Off Time-Nom (toff) :

380 ns

Current - Collector Pulsed (Icm) :

23A

Reverse Recovery Time :

37 ns

Power Dissipation :

34W

Gate-Emitter Thr Voltage-Max :

6V

Current Rating :

11.5A

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

Switching Energy :

340μJ (on), 300μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

REACH SVHC :

No SVHC

Published :

2003

Case Connection :

Isolated

Height :

9.02mm

JEDEC-95 Code :

TO-220AB

Fall Time-Max (tf) :

110ns

Collector Emitter Voltage (VCEO) :

2.8V

Width :

4.826mm

Radiation Hardening :

No

Length :

10.67mm

Max Power Dissipation :

34W

RoHS Status :

ROHS3 Compliant