IRG4IBC20KD
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- Mfr.Part #
- IRG4IBC20KD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 11.5A 34W TO220FP
- Stock
- 9,095
- In Stock ：
- 9,095
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Polarity/Channel Type :
- N-Channel
- Reverse Recovery Time :
- 37ns
- Input Type :
- Standard
- Turn On Time :
- 88 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge :
- 34nC
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Switching Energy :
- 340μJ (on), 300μJ (off)
- Package / Case :
- TO-220-3 Full Pack
- Power - Max :
- 34W
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 23A
- Turn Off Time-Nom (toff) :
- 380 ns
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 9A
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Published :
- 2000
- Test Condition :
- 480V, 9A, 50 Ω, 15V
- Surface Mount :
- No
- Transistor Application :
- Motor Control
- Td (on/off) @ 25°C :
- 54ns/180ns
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-220AB
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 11.5A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IRG4IBC20KD
IRG4IBC20KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4IBC20KD Description
Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). Whereas a field-effect transistor is a unipolar device, a bipolar transistor is so named because its operation involves two kinds of charge carriers, holes and electrons.
IRG4IBC20KD Features
? High switchi ng speed optimized for up to 25kHz with low VCE(on)
? Short Circuit Rating 1 0μs @ 125 ° C, VGE = 15V
? Generation 4 IGBT design provides tighter paramet er distribution and higher efficiency t han previous generation
? IGBT co-pac kaged with HEXFREDTM ultrafast, ultra-s oft-recovery anti-parallel diodes for u se in bridge configurations
? Industr y standard TO-220 FULLPAK C Short Circ uit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
27V @VGE = 15V, IC = 6.
3A n-ch an nel Bene .
IRG4IBC20KD Applications
■ Desktop microcomputer systems
■ Workstations
■ Servers
■ Game machines
■ Set top boxes
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