IRG4IBC20FDPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6V

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

34W

Number of Terminations :

3

Mounting Type :

Through Hole

Packaging :

Tube

Case Connection :

Isolated

Collector Emitter Voltage (VCEO) :

2V

Switching Energy :

250μJ (on), 640μJ (off)

Max Power Dissipation :

34W

Current Rating :

14.3A

Rise Time :

20ns

ECCN Code :

EAR99

Reverse Recovery Time :

37 ns

Published :

2000

Turn On Time :

63 ns

Height :

16.129mm

Voltage - Rated DC :

600V

Test Condition :

480V, 9A, 50 Ω, 15V

Turn Off Time-Nom (toff) :

610 ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.7442mm

Td (on/off) @ 25°C :

43ns/240ns

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

64A

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Gate Charge :

27nC

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Width :

4.826mm

Max Collector Current :

14.3A

Collector Emitter Saturation Voltage :

2V

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A