IRG4IBC20FD

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Mfr.Part #
IRG4IBC20FD
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 600V 14.3A 34W TO220FP
Stock
8,657
In Stock :
8,657

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Terminal Position :
Single
Package / Case :
TO-220-3 Full Pack
JEDEC-95 Code :
TO-220AB
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn On Time :
63 ns
Switching Energy :
250μJ (on), 640μJ (off)
Qualification Status :
Not Qualified
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
Test Condition :
480V, 9A, 50 Ω, 15V
Case Connection :
Isolated
Current - Collector Pulsed (Icm) :
64A
Turn Off Time-Nom (toff) :
610 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
POWER CONTROL
Operating Temperature :
-55°C~150°C TJ
Power - Max :
34W
Td (on/off) @ 25°C :
43ns/240ns
Number of Elements :
1
Published :
2000
Input Type :
Standard
Gate Charge :
27nC
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 9A
Voltage - Collector Emitter Breakdown (Max) :
600V
Packaging :
Tube
Transistor Element Material :
SILICON
Surface Mount :
No
RoHS Status :
Non-RoHS Compliant
Current - Collector (Ic) (Max) :
14.3A
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Additional Feature :
ULTRA FAST SOFT RECOVERY
Reverse Recovery Time :
37ns
Datasheets
IRG4IBC20FD
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4IBC20FD from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRG4IBC20FD pinout, IRG4IBC20FD datasheet PDF, IRG4IBC20FD amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4IBC20FD ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4IBC20FD


IRG4IBC20FD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4IBC20FD  Benefits

Simplified assembly

Highest efficiency and power density

HEXFREDTM antiparallel Diode minimizes

switching losses and EMI



IRG4IBC20FD  Features

Very Low 1.66V voltage drop

2.5kV, 60s insulation voltage⑤

4.8 mm creepage distance to the heatsink

Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

IGBT co-packaged with HEXFREDTM ultrafast,

ultrasoft recovery antiparallel diodes

Tighter parameter distribution

Industry-standard Isolated TO-220 FullpakTM

outline




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