IRG4CC40UB

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Mfr.Part #
IRG4CC40UB
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT CHIP
Stock
47,669
In Stock :
47,669

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Configuration :
Single
Transistor Element Material :
SILICON
Terminal Position :
UPPER
Additional Feature :
ULTRA FAST SPEED
Gate-Emitter Thr Voltage-Max :
6V
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Transistor Application :
POWER CONTROL
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
O-XUUC-N
Terminal Form :
NO LEAD
Voltage - Collector Emitter Breakdown (Max) :
600V
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 10A
Input Type :
Standard
Terminal Finish :
Tin/Lead (Sn/Pb)
Number of Elements :
1
Package / Case :
Die
JESD-609 Code :
e0
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IRG4CC40UB
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4CC40UB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:Die, IRG4CC40UB pinout, IRG4CC40UB datasheet PDF, IRG4CC40UB amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4CC40UB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4CC40UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4CC40UB Description


IRG4CC40UB is a 600v IGBT die in wafer form. IRG4CC40UB is manufactured by Infineon. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Hybrid, electric & powertrain systems Enterprise systems Datacenter & enterprise computing Personal electronics Home theater & entertainment . And the main parameter of this part is 600V Size 232x170 Gen 4 IGBT DIE ON WAFER. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



IRG4CC40UB Features


Collector-to- Emitter Saturation Voltage: 2.2V Max.

Colletor-to-Emitter Breakdown Voltage: 600V Min.

Gate Threshold Voltage: 3.0V Min. ,6.0V Max.

Zero Gate Voltage Collector Current: 250μA Max.

Gate-to-Emitter Leakage Current: ±1.1μA Max.



IRG4CC40UB Applications


Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Home theater & entertainment


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