IRG4CC40KB
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- Mfr.Part #
- IRG4CC40KB
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT CHIP
- Stock
- 43,964
- In Stock ：
- 43,964
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Terminal Form :
- NO LEAD
- JESD-30 Code :
- O-XUUC-N
- Surface Mount :
- yes
- Terminal Position :
- UPPER
- Transistor Application :
- POWER CONTROL
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Gate-Emitter Thr Voltage-Max :
- 6V
- Input Type :
- Standard
- Package / Case :
- Die
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Additional Feature :
- ULTRA FAST SPEED
- Datasheets
- IRG4CC40KB
IRG4CC40KB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4CC40KB Description
IRG4CC40KB transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4CC40KB MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4CC40KB has the common source configuration.
IRG4CC40KB Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG4CC40KB Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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