IRG4CC30UB

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Mfr.Part #
IRG4CC30UB
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT CHIP
Stock
8,655
In Stock :
8,655

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
NO LEAD
Mounting Type :
Surface Mount
Configuration :
Single
JESD-30 Code :
O-XUUC-N
Input Type :
Standard
ECCN Code :
EAR99
Package / Case :
Die
Surface Mount :
yes
Terminal Finish :
Tin/Lead (Sn/Pb)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
JESD-609 Code :
e0
Voltage - Collector Emitter Breakdown (Max) :
600V
Transistor Element Material :
SILICON
Number of Elements :
1
Gate-Emitter Thr Voltage-Max :
6V
Additional Feature :
ULTRA FAST SPEED
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 6A
Transistor Application :
POWER CONTROL
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
UPPER
Datasheets
IRG4CC30UB
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4CC30UB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:Die, IRG4CC30UB pinout, IRG4CC30UB datasheet PDF, IRG4CC30UB amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4CC30UB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4CC30UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4CC30UB Description


IRG4CC30UB is a 600v IGBT Die in wafer form. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. 



IRG4CC30UB Features


Collector-to- Emitter Saturation Voltage: 2.2V

Colletor-to-Emitter Breakdown Voltage: 600V

Gate Threshold Voltage: 3.0~6.0V

Zero Gate Voltage Collector Current: 250μA

Gate-to-Emitter Leakage Current: ±1.1μA



IRG4CC30UB Applications


Automotive 

Infotainment & cluster 

Communications equipment 

Wireless infrastructure 

Personal electronics 

Connected peripherals & printers


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