IRG4BC40WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6V

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.5V

Turn-Off Delay Time :

100 ns

Test Condition :

480V, 20A, 10 Ω, 15V

Current Rating :

40A

Number of Terminations :

3

Max Power Dissipation :

160W

Number of Pins :

3

Current - Collector Pulsed (Icm) :

160A

Package / Case :

TO-220-3

Turn Off Time-Nom (toff) :

174 ns

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Fall Time-Max (tf) :

110ns

Input Capacitance :

1.9nF

Radiation Hardening :

No

Height :

8.77mm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

27 ns

Power Dissipation :

160W

Factory Lead Time :

16 Weeks

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Rise Time :

22ns

Turn On Time :

49 ns

Packaging :

Tube

Mount :

Through Hole

Gate Charge :

98nC

Lead Free :

Contains Lead, Lead Free

Case Connection :

COLLECTOR

Element Configuration :

Single

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Width :

4.69mm

Published :

2000

Length :

10.54mm

Input Type :

Standard

Transistor Application :

POWER CONTROL

ECCN Code :

EAR99

Max Collector Current :

40A

Collector Emitter Breakdown Voltage :

600V

Termination :

Through Hole

Td (on/off) @ 25°C :

27ns/100ns

Voltage - Rated DC :

600V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW CONDUCTION LOSS

Switching Energy :

110μJ (on), 230μJ (off)

Collector Emitter Saturation Voltage :

2.5V