IRG4BC40W-STRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Td (on/off) @ 25°C :

27ns/100ns

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

294 ns

Additional Feature :

LOW CONDUCTION LOSS

Element Configuration :

Single

Weight :

260.39037mg

Number of Elements :

1

Max Collector Current :

40A

Number of Terminations :

2

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Test Condition :

480V, 20A, 10 Ω, 15V

Collector Emitter Voltage (VCEO) :

2.5V

Published :

2004

Radiation Hardening :

No

Turn On Time :

48 ns

Power - Max :

160W

Gate-Emitter Voltage-Max :

20V

Collector Emitter Breakdown Voltage :

600V

Number of Pins :

3

JESD-609 Code :

e3

Current - Collector Pulsed (Icm) :

160A

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6V

Transistor Application :

POWER CONTROL

Max Power Dissipation :

160W

Mount :

Surface Mount

Gate Charge :

98nC

Peak Reflow Temperature (Cel) :

260

Input Type :

Standard

Transistor Element Material :

SILICON

Switching Energy :

110μJ (on), 230μJ (off)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

JESD-30 Code :

R-PSSO-G2

Fall Time-Max (tf) :

110ns