IRG4BC40W-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Saturation Voltage :

2.05V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Rise Time :

23ns

Number of Pins :

3

Transistor Application :

POWER CONTROL

Operating Temperature :

-55°C~150°C TJ

Length :

10.668mm

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

480V, 20A, 10 Ω, 15V

Terminal Form :

Gull wing

Td (on/off) @ 25°C :

27ns/100ns

Terminal Position :

Single

Max Power Dissipation :

160W

Switching Energy :

110μJ (on), 230μJ (off)

Width :

4.826mm

Turn-Off Delay Time :

100 ns

Current - Collector Pulsed (Icm) :

160A

Gate Charge :

98nC

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Time :

48 ns

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Turn Off Time-Nom (toff) :

294 ns

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

40A

Element Configuration :

Dual

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Published :

2004

Fall Time-Max (tf) :

110ns

Mount :

Surface Mount, Through Hole

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Input Type :

Standard

Power Dissipation :

160W

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

600V

Turn On Delay Time :

27 ns

Max Collector Current :

40A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

2.5V

Case Connection :

COLLECTOR

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Gate-Emitter Voltage-Max :

20V

REACH SVHC :

No SVHC

Gate-Emitter Thr Voltage-Max :

6V

Mounting Type :

Surface Mount

JESD-609 Code :

e3