IRG4BC40W-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn Off Time-Nom (toff) :

294 ns

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Surface Mount :

yes

Mounting Type :

Surface Mount

Turn On Time :

48 ns

Fall Time-Max (tf) :

110ns

Terminal Position :

Single

Power Dissipation-Max (Abs) :

160W

Td (on/off) @ 25°C :

27ns/100ns

Test Condition :

480V, 20A, 10 Ω, 15V

Qualification Status :

Not Qualified

Number of Elements :

1

Additional Feature :

LOW CONDUCTION LOSS

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector (Ic) (Max) :

40A

Input Type :

Standard

Transistor Element Material :

SILICON

Power - Max :

160W

Configuration :

Single

Gate Charge :

98nC

Voltage - Collector Emitter Breakdown (Max) :

600V

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

6V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Packaging :

Tube

Current - Collector Pulsed (Icm) :

160A

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Switching Energy :

110μJ (on), 230μJ (off)

Published :

2004

Operating Temperature :

-55°C~150°C TJ