IRG4BC40W-LPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Additional Feature :

LOW CONDUCTION LOSS

Mount :

Through Hole

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Collector Current :

40A

Td (on/off) @ 25°C :

27ns/100ns

Max Power Dissipation :

160W

Gate-Emitter Thr Voltage-Max :

6V

Number of Terminations :

3

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Collector Emitter Voltage (VCEO) :

2.5V

JESD-609 Code :

e3

Switching Energy :

110μJ (on), 230μJ (off)

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

294 ns

Voltage - Rated DC :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Height :

9.652mm

Length :

10.668mm

Power Dissipation :

160W

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Turn On Time :

48 ns

Fall Time-Max (tf) :

110ns

Polarity/Channel Type :

N-Channel

Published :

2010

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Test Condition :

480V, 20A, 10 Ω, 15V

Time@Peak Reflow Temperature-Max (s) :

30

Weight :

2.084002g

Input Type :

Standard

Number of Elements :

1

Current Rating :

40A

RoHS Status :

ROHS3 Compliant

Gate Charge :

98nC

Width :

4.826mm

Rise Time :

22ns

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Terminal Position :

Single

Current - Collector Pulsed (Icm) :

160A

Collector Emitter Saturation Voltage :

2.36V

Lead Free :

Lead Free