IRG4BC40UPBF
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- Mfr.Part #
- IRG4BC40UPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 160W TO220AB
- Stock
- 45,490
- In Stock ：
- 45,490
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Thr Voltage-Max :
- 6V
- Element Configuration :
- Single
- Current Rating :
- 40A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2000
- Collector Emitter Saturation Voltage :
- 2.1V
- Length :
- 10.668mm
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 380 ns
- Number of Pins :
- 3
- Current - Collector Pulsed (Icm) :
- 160A
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Gate-Emitter Voltage-Max :
- 20V
- Turn-Off Delay Time :
- 110 ns
- ECCN Code :
- EAR99
- Termination :
- Through Hole
- Switching Energy :
- 320μJ (on), 350μJ (off)
- Additional Feature :
- ULTRA FAST SWITCHING
- Fall Time-Max (tf) :
- 180ns
- Height :
- 16.51mm
- Test Condition :
- 480V, 20A, 10 Ω, 15V
- Mount :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 20A
- Transistor Application :
- POWER CONTROL
- Voltage - Rated DC :
- 600V
- Turn On Time :
- 49 ns
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Max Collector Current :
- 40A
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Input Type :
- Standard
- Lead Free :
- Contains Lead, Lead Free
- Gate Charge :
- 100nC
- Turn On Delay Time :
- 34 ns
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Td (on/off) @ 25°C :
- 34ns/110ns
- Rise Time :
- 19ns
- Width :
- 4.826mm
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Terminations :
- 3
- Power Dissipation :
- 160W
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 160W
- Number of Elements :
- 1
- Datasheets
- IRG4BC40UPBF
IRG4BC40UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
The IRG4BC40UPBF is an Insulated Gate Bipolar Transistor. It is designed for high operating frequencies in hard switching (8-40 kHz) and resonant mode (more than 200 kHz). As to the type of electronics, an insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed.
IRG4BC40UPBF Features
? UltraFast: designed for high-frequency operation Hard switching at 8-40 kHz, resonant mode at >200 kHz
? 4th Generation In comparison to Generation 3, the IGBT design has a narrower parameter distribution and improved efficiency.
? TO-220AB packaging (industry standard)
? Lead-Free
? IGBTs from Generation 4 have the best efficiency available
? IGBTs that are tuned for specific applications
? Designed to be a "drop-in" replacement for Generation 3 IR IGBTs that are industry standard
IRG4BC40UPBF Applications
? Consumer Electronics
? Industrial Technology
? The Energy Sector
? Aerospace Electronic Devices
? Transportation
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