IRG4BC40SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Max Power Dissipation :

160W

Number of Pins :

3

Turn Off Time-Nom (toff) :

1940 ns

Height :

16.51mm

Power Dissipation :

160W

Switching Energy :

450μJ (on), 6.5mJ (off)

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.5V @ 15V, 31A

Packaging :

Tube

Max Collector Current :

60A

Collector Emitter Saturation Voltage :

1.5V

Collector Emitter Breakdown Voltage :

600V

REACH SVHC :

No SVHC

Length :

10.668mm

Td (on/off) @ 25°C :

22ns/650ns

RoHS Status :

ROHS3 Compliant

Fall Time-Max (tf) :

570ns

Lead Free :

Lead Free

Element Configuration :

Dual

Published :

2000

Turn On Delay Time :

22 ns

Transistor Application :

POWER CONTROL

ECCN Code :

EAR99

Turn On Time :

44 ns

Gate-Emitter Voltage-Max :

20V

Test Condition :

480V, 31A, 10 Ω, 15V

Turn-Off Delay Time :

650 ns

Case Connection :

COLLECTOR

Mount :

Surface Mount, Through Hole

Gate Charge :

100nC

Current - Collector Pulsed (Icm) :

120A

Terminal Position :

Single

Factory Lead Time :

16 Weeks

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Collector Emitter Voltage (VCEO) :

1.5V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Thr Voltage-Max :

6V

Input Type :

Standard

Width :

4.826mm