IRG4BC40FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

1.7V

Mount :

Through Hole

Number of Pins :

3

Voltage - Rated DC :

600V

Termination :

Through Hole

Terminal Position :

Single

Published :

2000

Height :

8.77mm

Current Rating :

49A

REACH SVHC :

No SVHC

Turn On Time :

46 ns

Turn Off Time-Nom (toff) :

690 ns

Test Condition :

480V, 27A, 10 Ω, 15V

Number of Terminations :

3

Package / Case :

TO-220-3

Factory Lead Time :

16 Weeks

Max Collector Current :

49A

Input Type :

Standard

Gate-Emitter Voltage-Max :

20V

Transistor Application :

POWER CONTROL

Operating Temperature :

-55°C~150°C TJ

Current - Collector Pulsed (Icm) :

196A

Number of Elements :

1

Length :

10.54mm

Rise Time :

18ns

Mounting Type :

Through Hole

Gate Charge :

100nC

Case Connection :

COLLECTOR

Turn On Delay Time :

26 ns

Td (on/off) @ 25°C :

26ns/240ns

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Width :

4.69mm

Power Dissipation :

160W

Switching Energy :

370μJ (on), 1.81mJ (off)

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Max Power Dissipation :

160W

Collector Emitter Saturation Voltage :

1.7V

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Element Configuration :

Dual

Polarity/Channel Type :

N-Channel

Weight :

6.000006g

Turn-Off Delay Time :

240 ns

Gate-Emitter Thr Voltage-Max :

6V

Additional Feature :

FAST SWITCHING