IRG4BC40FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Mount :

Through Hole

Width :

4.69mm

Current Rating :

49A

Collector Emitter Saturation Voltage :

1.7V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Turn-Off Delay Time :

240 ns

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

26ns/240ns

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Termination :

Through Hole

Input Type :

Standard

Package / Case :

TO-220-3

Current - Collector Pulsed (Icm) :

196A

Voltage - Rated DC :

600V

Test Condition :

480V, 27A, 10 Ω, 15V

Factory Lead Time :

16 Weeks

Turn On Time :

46 ns

Turn Off Time-Nom (toff) :

690 ns

Additional Feature :

FAST SWITCHING

Collector Emitter Voltage (VCEO) :

1.7V

Published :

2000

Terminal Position :

Single

Gate-Emitter Thr Voltage-Max :

6V

Radiation Hardening :

No

Max Power Dissipation :

160W

Weight :

6.000006g

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Power Dissipation :

160W

Switching Energy :

370μJ (on), 1.81mJ (off)

Number of Terminations :

3

Element Configuration :

Dual

Length :

10.54mm

Case Connection :

COLLECTOR

Max Collector Current :

49A

Rise Time :

18ns

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

26 ns

Gate Charge :

100nC

Height :

8.77mm

Number of Pins :

3