IRG4BC30W-SPBF
- Mfr.Part #
- IRG4BC30W-SPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- 600V WARP 60-150 KHZ DISCRETE IG
- Stock
- 10,379
- In Stock :
- 10,379
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Terminal Position :
- Single
- Gate-Emitter Voltage-Max :
- 20V
- Turn On Time :
- 41 ns
- Radiation Hardening :
- No
- Published :
- 1998
- Rise Time :
- 16ns
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Case Connection :
- COLLECTOR
- RoHS Status :
- RoHS Compliant
- Height :
- 4.83mm
- Turn Off Time-Nom (toff) :
- 300 ns
- Max Collector Current :
- 23A
- Voltage - Rated DC :
- 600V
- Transistor Application :
- POWER CONTROL
- JESD-609 Code :
- e3
- Power Dissipation :
- 100W
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Fall Time-Max (tf) :
- 100ns
- Max Power Dissipation :
- 100W
- Gate Charge :
- 51nC
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- IRG4BC30W-SPBF
- Peak Reflow Temperature (Cel) :
- 260
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 12A
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Width :
- 4.826mm
- Collector Emitter Saturation Voltage :
- 2.1V
- Additional Feature :
- LOW CONDUCTION LOSS
- Current - Collector Pulsed (Icm) :
- 92A
- Td (on/off) @ 25°C :
- 25ns/99ns
- Element Configuration :
- Dual
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Contains Lead, Lead Free
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Operating Temperature :
- -55°C~150°C TJ
- Switching Energy :
- 130µJ (on), 130µJ (off)
- Factory Lead Time :
- 11 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.668mm
- Gate-Emitter Thr Voltage-Max :
- 6V
- Current Rating :
- 23A
- Mount :
- Surface Mount
- Datasheets
- IRG4BC30W-SPBF

IRG4BC30W-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC30W-SPBF Description
IRG4BC30W-SPBF emerges as an insulated gate bipolar transistor provided by Infineon Technologies. It is a latest-generation IGBT providing tighter parameter distribution and exceptional reliability. IRG4BC30W-SPBF is specifically designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications. It is available in the industry standard D2Pak package for the purpose of saving board space. It is well suited for resonant mode switching based on its low conduction losses and minimal minority-carrier recombination.
IRG4BC30W-SPBF Features
Available in the D2Pak package
Tighter parameter distribution
Higher efficiency
Optimized for specified application conditions
High operating frequencies
IRG4BC30W-SPBF Applications
Switch-mode power supply
PFC (power factor correction) applications
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