IRG4BC30W-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Pins :

3

Mounting Type :

Surface Mount

Base Part Number :

IRG4BC30W-SPBF

Height :

4.83mm

Max Power Dissipation :

100W

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Test Condition :

480V, 12A, 23 Ω, 15V

Current Rating :

23A

Lead Free :

Contains Lead, Lead Free

Terminal Position :

Single

Input Type :

Standard

Transistor Element Material :

SILICON

Mount :

Surface Mount

Rise Time :

16ns

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Terminal Form :

Gull wing

Published :

1998

Max Collector Current :

23A

REACH SVHC :

No SVHC

Fall Time-Max (tf) :

100ns

JESD-30 Code :

R-PSSO-G2

Turn Off Time-Nom (toff) :

300 ns

ECCN Code :

EAR99

Number of Terminations :

2

Case Connection :

COLLECTOR

Gate Charge :

51nC

Gate-Emitter Voltage-Max :

20V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Width :

4.826mm

Gate-Emitter Thr Voltage-Max :

6V

Turn On Time :

41 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

Power Dissipation :

100W

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Collector Emitter Saturation Voltage :

2.1V

Transistor Application :

POWER CONTROL

Additional Feature :

LOW CONDUCTION LOSS

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Td (on/off) @ 25°C :

25ns/99ns

Switching Energy :

130µJ (on), 130µJ (off)

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

2.7V

Current - Collector Pulsed (Icm) :

92A

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Dual

Length :

10.668mm

Factory Lead Time :

11 Weeks