IRG4BC30W-S

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Mfr.Part #
IRG4BC30W-S
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 600V 23A 100W D2PAK
Stock
24,755
In Stock :
24,755

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Power - Max :
100W
Mounting Type :
Surface Mount
Additional Feature :
LOW CONDUCTION LOSS
Turn Off Time-Nom (toff) :
300 ns
Test Condition :
480V, 12A, 23 Ω, 15V
Input Type :
Standard
Polarity/Channel Type :
N-Channel
Case Connection :
COLLECTOR
Number of Terminations :
2
Packaging :
Tube
Voltage - Collector Emitter Breakdown (Max) :
600V
Transistor Application :
POWER CONTROL
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate Charge :
51nC
Base Part Number :
IRG4BC30W-S
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
30
Qualification Status :
Not Qualified
Current - Collector Pulsed (Icm) :
92A
Peak Reflow Temperature (Cel) :
225
Configuration :
Single
Current - Collector (Ic) (Max) :
23A
Turn On Time :
41 ns
Td (on/off) @ 25°C :
25ns/99ns
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
1997
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
JESD-609 Code :
e0
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Switching Energy :
130µJ (on), 130µJ (off)
Number of Elements :
1
Terminal Finish :
Tin/Lead (Sn/Pb)
Datasheets
IRG4BC30W-S
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC30W-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:IRG4BC30W-S, Operating Temperature:-55°C~150°C TJ, IRG4BC30W-S pinout, IRG4BC30W-S datasheet PDF, IRG4BC30W-S amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC30W-S ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC30W-S


IRG4BC30W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC30W-S Description


The IRG4BC30W-S is an IGBT 600 V 23 A 100 W Surface Mount D2PAK. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.



IRG4BC30W-S Features


  • 50% reduction of Eoff parameter

  • Low IGBT conduction losses

  • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

  • Industry-benchmark switching losses improve efficiency of all power supply topologies



IRG4BC30W-S Applications


  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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