IRG4BC30UPBF

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Mfr.Part #
IRG4BC30UPBF
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
ULTRAFAST SPEED IGBT
Stock
29,973
In Stock :
29,973

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Additional Feature :
ULTRA FAST SWITCHING
Gate-Emitter Thr Voltage-Max :
6V
Input Type :
Standard
Radiation Hardening :
No
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
4.826mm
Td (on/off) @ 25°C :
17ns/78ns
Gate Charge :
50nC
Factory Lead Time :
16 Weeks
Number of Elements :
1
REACH SVHC :
No SVHC
Number of Pins :
3
Element Configuration :
Single
Switching Energy :
160μJ (on), 200μJ (off)
Published :
2000
Lead Free :
Contains Lead, Lead Free
Length :
10.668mm
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 12A
Voltage - Rated DC :
600V
Height :
16.51mm
Current - Collector Pulsed (Icm) :
92A
Turn Off Time-Nom (toff) :
320 ns
Collector Emitter Saturation Voltage :
2.1V
Number of Terminations :
3
Test Condition :
480V, 12A, 23 Ω, 15V
Package / Case :
TO-220-3
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
17 ns
Case Connection :
COLLECTOR
Turn-Off Delay Time :
78 ns
Collector Emitter Voltage (VCEO) :
2.1V
Power Dissipation :
100W
Rise Time :
9.6ns
Max Power Dissipation :
100W
Fall Time-Max (tf) :
150ns
Transistor Application :
POWER CONTROL
JEDEC-95 Code :
TO-220AB
Turn On Time :
33 ns
Input Capacitance :
1.1nF
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Gate-Emitter Voltage-Max :
20V
Max Collector Current :
23A
ECCN Code :
EAR99
Current Rating :
23A
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Transistor Element Material :
SILICON
Termination :
Through Hole
Datasheets
IRG4BC30UPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4BC30UPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRG4BC30UPBF pinout, IRG4BC30UPBF datasheet PDF, IRG4BC30UPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4BC30UPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Description


The IRG4BC30UPBF is an insulated gate bipolar transistor. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.



Features


  • Industry standard TO-220AB package

  • Lead-Free

  • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

  • Generation 4 IGBT design provides tighter parameter distribution and higher effciency than Generation 3

  • IGBTs optimized for specified application conditions



Application


  • Motor Drive & Control

  • Alternative Energy

  • Power Management

  • Consumer Electronics

  • Maintenance & Repair


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