IRG4BC30U-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Turn Off Time-Nom (toff) :

320 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power - Max :

100W

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Fall Time-Max (tf) :

150ns

Packaging :

Tube

Power Dissipation-Max (Abs) :

100W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Td (on/off) @ 25°C :

17ns/78ns

Test Condition :

480V, 12A, 23 Ω, 15V

Current - Collector Pulsed (Icm) :

92A

Voltage - Collector Emitter Breakdown (Max) :

600V

Transistor Application :

POWER CONTROL

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Configuration :

Single

Turn On Time :

33 ns

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Current - Collector (Ic) (Max) :

23A

Terminal Position :

Single

Published :

1998

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

50nC

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Switching Energy :

160μJ (on), 200μJ (off)

Input Type :

Standard