IRG4BC30SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Turn On Time :

40 ns

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

34A

Height :

15.24mm

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

50nC

Radiation Hardening :

No

Current Rating :

34A

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

540 ns

Number of Terminations :

3

Published :

2000

Max Power Dissipation :

100W

Turn Off Time-Nom (toff) :

1550 ns

Power Dissipation :

100W

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

22 ns

Voltage - Rated DC :

600V

Switching Energy :

260μJ (on), 3.45mJ (off)

Packaging :

Tube

Fall Time-Max (tf) :

590ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

250

Number of Pins :

3

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Collector Emitter Voltage (VCEO) :

1.6V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

600V

Terminal Position :

Single

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 18A

Lead Free :

Lead Free

Test Condition :

480V, 18A, 23 Ω, 15V

Current - Collector Pulsed (Icm) :

68A

Termination :

Through Hole

Mount :

Through Hole

Rise Time :

18ns

Gate-Emitter Thr Voltage-Max :

6V

Number of Elements :

1

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

22ns/540ns

Length :

10.54mm

Collector Emitter Saturation Voltage :

1.4V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier