IRG4BC30S-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSSO-G2

Fall Time-Max (tf) :

590ns

Current - Collector Pulsed (Icm) :

68A

Power Dissipation-Max (Abs) :

100W

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Power - Max :

100W

Surface Mount :

yes

Turn Off Time-Nom (toff) :

1550 ns

Terminal Form :

Gull wing

Test Condition :

480V, 18A, 23 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 18A

Gate-Emitter Voltage-Max :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Published :

2000

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

Single

Switching Energy :

260μJ (on), 3.45mJ (off)

Terminal Position :

Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Case Connection :

COLLECTOR

Gate Charge :

50nC

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

34A

Turn On Time :

40 ns

Gate-Emitter Thr Voltage-Max :

6V

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

22ns/540ns

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Collector Emitter Breakdown (Max) :

600V

ECCN Code :

EAR99

Input Type :

Standard

Number of Elements :

1