IRG4BC30S

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Mfr.Part #
IRG4BC30S
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 34A 100W TO220AB
Stock
18,244
In Stock :
18,244

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Td (on/off) @ 25°C :
22ns/540ns
Turn Off Time-Nom (toff) :
1550 ns
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Case Connection :
COLLECTOR
Number of Terminations :
3
Transistor Element Material :
SILICON
Published :
2000
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Transistor Application :
POWER CONTROL
Input Type :
Standard
Turn On Time :
40 ns
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge :
50nC
Package / Case :
TO-220-3
RoHS Status :
Non-RoHS Compliant
Test Condition :
480V, 18A, 23 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) :
600V
JESD-30 Code :
R-PSFM-T3
Vce(on) (Max) @ Vge, Ic :
1.6V @ 15V, 18A
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Current - Collector Pulsed (Icm) :
68A
Power - Max :
100W
JEDEC-95 Code :
TO-220AB
Switching Energy :
260μJ (on), 3.45mJ (off)
Configuration :
Single
Current - Collector (Ic) (Max) :
34A
Datasheets
IRG4BC30S
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC30S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IRG4BC30S pinout, IRG4BC30S datasheet PDF, IRG4BC30S amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC30S ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC30S


IRG4BC30S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC30S Bipolar Transistor Description


The IRG4BC30S bipolar transistor from Infineon represents the state-of-art manufacturing technique by enclosing the part into a compact TO-220AB package. This bipolar transistor is designed to replace industry-standard G-3 IR IGBTs and can work at low frequencies yet remain high efficiency at the same time.



IRG4BC30S Bipolar Transistor Features


High efficiency

Designed to be a "drop-in" replacement for equivalent Industry-standard Generation 3 IR IGBTs

Minimum Saturation

Available in a TO-220AB package

Low operating frequency: <1 kHz



IRG4BC30S Bipolar Transistor Applications


General-Purpose Amplifiers

LED Lights

Linear Applications

Pumps

High Current Devices

Motor Control

Low-Speed Switching Applications

HVAC System

Home Appliances


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