IRG4BC30KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Delay Time :

60 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Td (on/off) @ 25°C :

60ns/160ns

Number of Terminations :

3

Test Condition :

480V, 16A, 23 Ω, 15V

Transistor Application :

Motor Control

Published :

2000

Packaging :

Tube

Height :

8.763mm

Width :

4.69mm

Collector Emitter Breakdown Voltage :

600V

Power Dissipation :

100W

Voltage - Rated DC :

600V

Mounting Type :

Through Hole

Fall Time-Max (tf) :

120ns

Max Collector Current :

28A

Reverse Recovery Time :

42 ns

Collector Emitter Voltage (VCEO) :

2.7V

RoHS Status :

RoHS Compliant

Gate-Emitter Thr Voltage-Max :

6V

Length :

10.5156mm

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

370 ns

Switching Energy :

600μJ (on), 580μJ (off)

Number of Pins :

3

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Collector Emitter Saturation Voltage :

2.21V

Additional Feature :

LOW CONDUCTION LOSS

Mount :

Through Hole

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

56A

Rise Time :

42ns

Package / Case :

TO-220-3

Gate-Emitter Voltage-Max :

20V

Termination :

Through Hole

Radiation Hardening :

No

Turn-Off Delay Time :

160 ns

Gate Charge :

67nC

Factory Lead Time :

16 Weeks

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

Turn On Time :

100 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Max Power Dissipation :

100W

Current Rating :

28A

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1