IRG4BC30KD-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

600μJ (on), 580μJ (off)

Max Power Dissipation :

100W

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Elements :

1

Max Collector Current :

28A

Factory Lead Time :

14 Weeks

Power Dissipation :

100W

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6V

Input Type :

Standard

Test Condition :

480V, 16A, 23 Ω, 15V

Mounting Type :

Surface Mount

Turn On Delay Time :

60 ns

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Current Rating :

28A

Collector Emitter Voltage (VCEO) :

2.7V

Base Part Number :

IRG4BC30KD-SPBF

REACH SVHC :

No SVHC

Element Configuration :

Single

Gate Charge :

67nC

Fall Time-Max (tf) :

120ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

42ns

Terminal Form :

Gull wing

Length :

10.668mm

Reverse Recovery Time :

42 ns

Radiation Hardening :

No

Number of Terminations :

2

Turn-Off Delay Time :

160 ns

Current - Collector Pulsed (Icm) :

56A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Additional Feature :

LOW CONDUCTION LOSS

Td (on/off) @ 25°C :

60ns/160ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Published :

2004

Turn On Time :

100 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

Motor Control

Height :

4.699mm

Voltage - Rated DC :

600V

Collector Emitter Saturation Voltage :

2.7V

Packaging :

Tube

Turn Off Time-Nom (toff) :

370 ns