IRG4BC30FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Fall Time-Max (tf) :

270ns

REACH SVHC :

No SVHC

Termination :

Through Hole

ECCN Code :

EAR99

Additional Feature :

FAST SPEED

RoHS Status :

RoHS Compliant

Collector Emitter Saturation Voltage :

1.59V

Turn Off Time-Nom (toff) :

640 ns

Transistor Application :

POWER CONTROL

Switching Energy :

230μJ (on), 1.18mJ (off)

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

1.8V

Height :

8.77mm

Turn-Off Delay Time :

200 ns

Current - Collector Pulsed (Icm) :

124A

Factory Lead Time :

16 Weeks

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Max Power Dissipation :

100W

Published :

2000

Test Condition :

480V, 17A, 23 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Package / Case :

TO-220-3

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

36 ns

Number of Elements :

1

Input Type :

Standard

Gate Charge :

51nC

Max Collector Current :

31A

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Number of Pins :

3

Width :

4.69mm

Power Dissipation :

100W

Number of Terminations :

3

Length :

10.54mm

Current Rating :

31A

Td (on/off) @ 25°C :

21ns/200ns

Turn On Delay Time :

21 ns

Voltage - Rated DC :

600V

Mounting Type :

Through Hole

Lead Free :

Contains Lead, Lead Free

Case Connection :

COLLECTOR

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Transistor Element Material :

SILICON

Radiation Hardening :

No

Rise Time :

15ns