IRG4BC30FDSTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Peak Reflow Temperature (Cel) :

260

Weight :

260.39037mg

Turn Off Time-Nom (toff) :

620 ns

Power - Max :

100W

Max Power Dissipation :

100W

Max Collector Current :

31A

Turn On Time :

69 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Voltage (VCEO) :

1.8V

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

42ns/230ns

Reverse Recovery Time :

42 ns

Radiation Hardening :

No

Switching Energy :

630μJ (on), 1.39mJ (off)

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Published :

2004

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Test Condition :

480V, 17A, 23 Ω, 15V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Collector Pulsed (Icm) :

120A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge :

51nC

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6V

Input Type :

Standard

Element Configuration :

Single