IRG4BC30FDPBF

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Mfr.Part #
IRG4BC30FDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 31A 100W TO220AB
Stock
40,987
In Stock :
40,987

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Package / Case :
TO-220-3
Width :
4.69mm
Turn On Time :
69 ns
JEDEC-95 Code :
TO-220AB
Voltage - Rated DC :
600V
Length :
10.54mm
Lead Free :
Lead Free
Termination :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Gate-Emitter Voltage-Max :
20V
Turn Off Time-Nom (toff) :
620 ns
Number of Terminations :
3
Mounting Type :
Through Hole
Height :
8.77mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Td (on/off) @ 25°C :
42ns/230ns
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
POWER CONTROL
Max Collector Current :
31A
Gate Charge :
51nC
Max Power Dissipation :
100W
Element Configuration :
Single
Rise Time :
26ns
Turn-Off Delay Time :
230 ns
Collector Emitter Voltage (VCEO) :
1.8V
Transistor Element Material :
SILICON
Radiation Hardening :
No
Mount :
Through Hole
Reverse Recovery Time :
42 ns
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Turn On Delay Time :
42 ns
Factory Lead Time :
16 Weeks
Gate-Emitter Thr Voltage-Max :
6V
Number of Elements :
1
Input Type :
Standard
Number of Pins :
3
Test Condition :
480V, 17A, 23 Ω, 15V
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Published :
1998
Current - Collector Pulsed (Icm) :
124A
Packaging :
Tube
Collector Emitter Saturation Voltage :
1.59V
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 17A
Power Dissipation :
100W
Polarity/Channel Type :
N-Channel
Switching Energy :
630μJ (on), 1.39mJ (off)
Current Rating :
31A
Datasheets
IRG4BC30FDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC30FDPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IRG4BC30FDPBF pinout, IRG4BC30FDPBF datasheet PDF, IRG4BC30FDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC30FDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC30FDPBF


IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Descriptions


The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.



Features


● Optimized for specific application conditions

● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

● IGBT co-packaged with HEXFREDTM ultrafast,

● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations

● Industry-standard TO-220AB package

● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).

● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

● Lead-Free



Applications


● HVAC

● Consumer Electronics

● Power Management

● Switching

● Amplification

● Converters

● Automatic Switch


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