IRG4BC30FDPBF
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- Mfr.Part #
- IRG4BC30FDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IRG4BC30 - DISCRETE IGBT WITH AN
- Stock
- 33,533
- In Stock ：
- 33,533
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 51nC
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Td (on/off) @ 25°C :
- 42ns/230ns
- Max Collector Current :
- 31A
- Gate-Emitter Voltage-Max :
- 20V
- Rise Time :
- 26ns
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 100W
- Test Condition :
- 480V, 17A, 23 Ω, 15V
- Case Connection :
- COLLECTOR
- Height :
- 8.77mm
- Voltage - Rated DC :
- 600V
- Power Dissipation :
- 100W
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 17A
- Switching Energy :
- 630μJ (on), 1.39mJ (off)
- JEDEC-95 Code :
- TO-220AB
- Turn On Delay Time :
- 42 ns
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 230 ns
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Thr Voltage-Max :
- 6V
- Published :
- 1998
- Transistor Element Material :
- SILICON
- Current - Collector Pulsed (Icm) :
- 124A
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Width :
- 4.69mm
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Collector Emitter Breakdown Voltage :
- 600V
- Turn On Time :
- 69 ns
- Reverse Recovery Time :
- 42 ns
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Turn Off Time-Nom (toff) :
- 620 ns
- Number of Pins :
- 3
- Termination :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Length :
- 10.54mm
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 31A
- Collector Emitter Saturation Voltage :
- 1.59V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tube
- Datasheets
- IRG4BC30FDPBF
IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Descriptions
The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.
Features
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
● IGBT co-packaged with HEXFREDTM ultrafast,
● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry-standard TO-220AB package
● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● Lead-Free
Applications
● HVAC
● Consumer Electronics
● Power Management
● Switching
● Amplification
● Converters
● Automatic Switch
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