IRG4BC30FD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

370μJ (on), 1.42mJ (off)

Length :

10.54mm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2000

Factory Lead Time :

16 Weeks

Gate Charge :

57nC

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Input Type :

Standard

Packaging :

Tube

Package / Case :

TO-220-3

Turn Off Time-Nom (toff) :

740 ns

Max Collector Current :

31A

Gate-Emitter Thr Voltage-Max :

6V

Test Condition :

480V, 17A, 23 Ω, 15V

Max Power Dissipation :

100W

Current - Collector Pulsed (Icm) :

124A

Transistor Application :

POWER CONTROL

Power Dissipation :

100W

Mount :

Through Hole

Number of Terminations :

3

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

Height :

15.24mm

Collector Emitter Voltage (VCEO) :

1.8V

Lead Free :

Lead Free

Turn On Time :

46 ns

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Number of Elements :

1

Reverse Recovery Time :

46 ns

Transistor Element Material :

SILICON

Width :

4.69mm

ECCN Code :

EAR99

Current Rating :

31A

REACH SVHC :

No SVHC

Radiation Hardening :

No

Td (on/off) @ 25°C :

22ns/250ns

Collector Emitter Saturation Voltage :

1.8V

Termination :

Through Hole

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Mounting Type :

Through Hole

Rise Time :

24ns