IRG4BC30FD1PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-220AB

Height :

15.24mm

Element Configuration :

Single

Package / Case :

TO-220-3

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Gate Charge :

57nC

Published :

2000

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

6V

Voltage - Rated DC :

600V

Termination :

Through Hole

Mount :

Through Hole

Number of Elements :

1

Mounting Type :

Through Hole

Number of Terminations :

3

Rise Time :

24ns

Switching Energy :

370μJ (on), 1.42mJ (off)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

REACH SVHC :

No SVHC

Length :

10.54mm

Td (on/off) @ 25°C :

22ns/250ns

Input Type :

Standard

Max Collector Current :

31A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn On Time :

46 ns

Transistor Application :

POWER CONTROL

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

16 Weeks

RoHS Status :

RoHS Compliant

Turn Off Time-Nom (toff) :

740 ns

Max Power Dissipation :

100W

Collector Emitter Saturation Voltage :

1.8V

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

1.8V

Reverse Recovery Time :

46 ns

Packaging :

Tube

Power Dissipation :

100W

Test Condition :

480V, 17A, 23 Ω, 15V

Current Rating :

31A

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

124A

Operating Temperature :

-55°C~150°C TJ

Width :

4.69mm