IRG4BC30FD-SPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Turn On Time :

69 ns

Gate Charge :

51nC

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Turn Off Time-Nom (toff) :

620 ns

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

2

Gate-Emitter Thr Voltage-Max :

6V

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

ECCN Code :

EAR99

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Reverse Recovery Time :

42 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Collector Emitter Saturation Voltage :

1.8V

Terminal Form :

Gull wing

Max Power Dissipation :

100W

Case Connection :

COLLECTOR

Radiation Hardening :

No

Number of Pins :

3

Published :

2010

Number of Elements :

1

Mount :

Surface Mount

Switching Energy :

630μJ (on), 1.39mJ (off)

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

31A

Test Condition :

480V, 17A, 23 Ω, 15V

Height :

4.699mm

Length :

10.668mm

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

100W

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

124A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.652mm

Voltage - Rated DC :

600V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

31A

Td (on/off) @ 25°C :

42ns/230ns

Rise Time :

27ns

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

1.8V