IRG4BC30FD-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e0

Terminal Position :

Single

Surface Mount :

yes

Td (on/off) @ 25°C :

42ns/230ns

Transistor Application :

POWER CONTROL

Input Type :

Standard

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

Test Condition :

480V, 17A, 23 Ω, 15V

Published :

2004

Packaging :

Tube

Number of Elements :

1

Gate Charge :

51nC

RoHS Status :

Non-RoHS Compliant

Turn On Time :

69 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

225

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Current - Collector (Ic) (Max) :

31A

Number of Terminations :

2

Current - Collector Pulsed (Icm) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Voltage - Collector Emitter Breakdown (Max) :

600V

Terminal Form :

Gull wing

Power - Max :

100W

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

42ns

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Switching Energy :

630μJ (on), 1.39mJ (off)

Qualification Status :

Not Qualified

Turn Off Time-Nom (toff) :

620 ns

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB