IRG4BC20WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

6V

Height :

8.77mm

Factory Lead Time :

16 Weeks

Published :

2000

Packaging :

Tube

Radiation Hardening :

No

Terminal Position :

Single

Turn-Off Delay Time :

110 ns

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

36 ns

Number of Terminations :

3

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 6.5A

Collector Emitter Saturation Voltage :

2.6V

Length :

10.54mm

Width :

4.69mm

Additional Feature :

LOW CONDUCTION LOSS

Gate Charge :

26nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time-Max (tf) :

96ns

Turn Off Time-Nom (toff) :

300 ns

Collector Emitter Voltage (VCEO) :

2.6V

Power Dissipation :

60W

Package / Case :

TO-220-3

Number of Pins :

3

Current Rating :

13A

REACH SVHC :

No SVHC

Rise Time :

15ns

RoHS Status :

RoHS Compliant

Input Type :

Standard

Current - Collector Pulsed (Icm) :

52A

Gate-Emitter Voltage-Max :

20V

Mount :

Through Hole

Voltage - Rated DC :

600V

Max Power Dissipation :

60W

Transistor Application :

Motor Control

JEDEC-95 Code :

TO-220AB

Switching Energy :

60μJ (on), 80μJ (off)

ECCN Code :

EAR99

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

22ns/110ns

Max Collector Current :

13A

Turn On Delay Time :

22 ns

Element Configuration :

Dual

Mounting Type :

Through Hole

Test Condition :

480V, 6.5A, 50 Ω, 15V

Operating Temperature :

-55°C~150°C TJ