IRG4BC20W-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

22ns/110ns

Test Condition :

480V, 6.5A, 50 Ω, 15V

Current Rating :

13A

Number of Terminations :

2

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

52A

Fall Time-Max (tf) :

96ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

2.6V

Additional Feature :

LOW CONDUCTION LOSS

Power Dissipation :

60W

Number of Pins :

3

Max Collector Current :

13A

Height :

9.652mm

Switching Energy :

60μJ (on), 80μJ (off)

Terminal Form :

Gull wing

Factory Lead Time :

11 Weeks

Lead Free :

Lead Free

Published :

2000

Rise Time :

14ns

REACH SVHC :

No SVHC

Width :

4.826mm

Turn On Time :

36 ns

Gate Charge :

26nC

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Type :

Standard

Gate-Emitter Voltage-Max :

20V

Mount :

Surface Mount

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 6.5A

Collector Emitter Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

600V

Turn Off Time-Nom (toff) :

300 ns

Mounting Type :

Surface Mount

Element Configuration :

Dual

Gate-Emitter Thr Voltage-Max :

6V

Transistor Element Material :

SILICON

Packaging :

Tube

Max Power Dissipation :

60W

Case Connection :

COLLECTOR

Length :

10.668mm

Collector Emitter Saturation Voltage :

2.6V

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single