IRG4BC20UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current Rating :

13A

Height :

16.51mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Current - Collector Pulsed (Icm) :

52A

Power Dissipation :

60W

Max Power Dissipation :

60W

Mount :

Through Hole

Number of Elements :

1

Switching Energy :

160μJ (on), 130μJ (off)

RoHS Status :

RoHS Compliant

Published :

2003

Turn Off Time-Nom (toff) :

320 ns

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Max Collector Current :

13A

Length :

10.668mm

Transistor Application :

POWER CONTROL

Gate Charge :

27nC

Td (on/off) @ 25°C :

39ns/93ns

Gate-Emitter Thr Voltage-Max :

6V

Termination :

Through Hole

Collector Emitter Saturation Voltage :

2.1V

Width :

4.826mm

Factory Lead Time :

16 Weeks

Test Condition :

480V, 6.5A, 50 Ω, 15V

Turn-Off Delay Time :

93 ns

Rise Time :

15ns

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Number of Pins :

3

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Turn On Time :

55 ns

Reverse Recovery Time :

37 ns

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

2.1V

Fall Time-Max (tf) :

170ns

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Input Type :

Standard

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

Packaging :

Tube

Turn On Delay Time :

39 ns