IRG4BC20UD-STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

52A

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

6V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

480V, 6.5A, 50 Ω, 15V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Fall Time-Max (tf) :

170ns

Turn On Time :

55 ns

Terminal Form :

Gull wing

Turn Off Time-Nom (toff) :

320 ns

Gate-Emitter Voltage-Max :

20V

Power Dissipation-Max (Abs) :

60W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge :

27nC

RoHS Status :

Non-RoHS Compliant

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Input Type :

Standard

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

39ns/93ns

Power - Max :

60W

Switching Energy :

160μJ (on), 130μJ (off)

Reverse Recovery Time :

37ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2001

Terminal Position :

Single

Number of Elements :

1

Current - Collector (Ic) (Max) :

13A

Surface Mount :

yes

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

600V

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel