IRG4BC20UD-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Power - Max :

60W

Current - Collector Pulsed (Icm) :

52A

Gate Charge :

27nC

Turn On Time :

55 ns

Transistor Application :

POWER CONTROL

Qualification Status :

Not Qualified

Published :

2001

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

320 ns

Terminal Finish :

Tin/Lead (Sn/Pb)

Reverse Recovery Time :

37ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

Number of Elements :

1

Current - Collector (Ic) (Max) :

13A

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

600V

Input Type :

Standard

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Mounting Type :

Surface Mount

Switching Energy :

160μJ (on), 130μJ (off)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

225

Terminal Form :

Gull wing

Test Condition :

480V, 6.5A, 50 Ω, 15V

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

39ns/93ns

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

COLLECTOR

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single