IRG4BC20UD
- Mfr.Part #
- IRG4BC20UD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 13A 60W TO220AB
- Stock
- 46,253
- In Stock :
- 46,253
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- 39ns/93ns
- Current - Collector (Ic) (Max) :
- 13A
- Turn Off Time-Nom (toff) :
- 320 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 6.5A
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Time :
- 55 ns
- Reverse Recovery Time :
- 37ns
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Gate Charge :
- 27nC
- Current - Collector Pulsed (Icm) :
- 52A
- JEDEC-95 Code :
- TO-220AB
- Test Condition :
- 480V, 6.5A, 50 Ω, 15V
- Power - Max :
- 60W
- Transistor Application :
- POWER CONTROL
- RoHS Status :
- Non-RoHS Compliant
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Switching Energy :
- 160μJ (on), 130μJ (off)
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Input Type :
- Standard
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2003
- Packaging :
- Tube
- Datasheets
- IRG4BC20UD

IRG4BC20UD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20UD Description
IRG4BC20UD is an insulated gate bipolar transistor with ultrafast soft recovery diode in TO-220-3 package, manufactured by Infineon Technologies. We can use it in power control.
IRG4BC20UD Features
-
Lead-free
-
Industry standard TO-220AB package
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
-
IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
-
Ultrafast: optimized for high operating frequencies 8-40kHz in hard switching. >200 kHz in resonant mode.
IRG4BC20UD Applications
-
Power control
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