IRG4BC20SPBF
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- Mfr.Part #
- IRG4BC20SPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IRG4BC20 - DISCRETE IGBT WITHOUT
- Stock
- 37,268
- In Stock ：
- 37,268
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 19A
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 540 ns
- Switching Energy :
- 120μJ (on), 2.05mJ (off)
- Turn On Time :
- 38 ns
- Case Connection :
- COLLECTOR
- Gate-Emitter Thr Voltage-Max :
- 6V
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 1540 ns
- Width :
- 4.69mm
- Input Type :
- Standard
- Gate-Emitter Voltage-Max :
- 20V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Current - Collector Pulsed (Icm) :
- 38A
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 10A
- Factory Lead Time :
- 16 Weeks
- Voltage - Rated DC :
- 600V
- Td (on/off) @ 25°C :
- 27ns/540ns
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- Termination :
- Through Hole
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Gate Charge :
- 27nC
- Transistor Application :
- POWER CONTROL
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2000
- Current Rating :
- 19A
- Height :
- 8.77mm
- Number of Terminations :
- 3
- Length :
- 10.54mm
- Max Power Dissipation :
- 60W
- Rise Time :
- 9.7ns
- Collector Emitter Saturation Voltage :
- 1.4V
- Turn On Delay Time :
- 27 ns
- Test Condition :
- 480V, 10A, 50 Ω, 15V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Dual
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 60W
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Radiation Hardening :
- No
- Datasheets
- IRG4BC20SPBF
IRG4BC20SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20SPBF Description
The IRG4BC20SPBF is an IGBT 600 V 19 A 60 W Through Hole TO-220AB. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRG4BC20SPBF Features
-
Industry standard TO-220AB package
-
Lead-Free
-
Standard: optimized for minimum saturation voltage and low operating frequencies (＜1kHz)
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
-
Generation 4 IGBTs offer highest efficiency available
-
IGBTs optimized for specified application conditions
IRG4BC20SPBF Applications
-
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
-
It is used in UPS (Uninterruptible Power Supply) system.
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It is used in AC and DC motor drives offering speed control.
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It is used in chopper and inverters.
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It is used in solar inverters.
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