IRG4BC20SDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

RoHS Status :

RoHS Compliant

Turn On Time :

99 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Max Power Dissipation :

60W

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Turn-Off Delay Time :

1.04 μs

Collector Emitter Saturation Voltage :

1.6V

Factory Lead Time :

18 Weeks

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

1.6V

Additional Feature :

LOW CONDUCTION LOSS

Polarity/Channel Type :

N-Channel

Current Rating :

19A

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 10A

ECCN Code :

EAR99

Packaging :

Tube

Height :

8.77mm

Mount :

Through Hole

Width :

4.69mm

Mounting Type :

Through Hole

Reverse Recovery Time :

37 ns

Package / Case :

TO-220-3

Max Collector Current :

19A

Switching Energy :

320μJ (on), 2.58mJ (off)

Turn On Delay Time :

62 ns

Td (on/off) @ 25°C :

62ns/690ns

Length :

10.54mm

Rise Time :

35ns

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

1780 ns

Radiation Hardening :

No

Test Condition :

480V, 10A, 50 Ω, 15V

Power Dissipation :

60W

REACH SVHC :

No SVHC

Gate Charge :

27nC

Input Type :

Standard

Published :

2010

Case Connection :

COLLECTOR

Termination :

Through Hole

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

38A

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

600V

Lead Free :

Contains Lead, Lead Free

Number of Pins :

3