IRG4BC20SD-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Test Condition :

480V, 10A, 50 Ω, 15V

Gate Charge :

27nC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Packaging :

Tube

Mount :

Surface Mount

Voltage - Rated DC :

600V

Case Connection :

COLLECTOR

Input Type :

Standard

Number of Pins :

3

Switching Energy :

320μJ (on), 2.58mJ (off)

Max Collector Current :

19A

Gate-Emitter Voltage-Max :

20V

Element Configuration :

Single

Current Rating :

19A

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 10A

Peak Reflow Temperature (Cel) :

260

Gate-Emitter Thr Voltage-Max :

6V

Mounting Type :

Surface Mount

Td (on/off) @ 25°C :

62ns/690ns

Turn Off Time-Nom (toff) :

1780 ns

Number of Elements :

1

Power Dissipation :

60W

Additional Feature :

LOW CONDUCTION LOSS

Max Power Dissipation :

60W

ECCN Code :

EAR99

Published :

1997

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

600V

Reverse Recovery Time :

37 ns

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Saturation Voltage :

1.4V

JESD-609 Code :

e3

Number of Terminations :

2

Turn On Time :

99 ns

Current - Collector Pulsed (Icm) :

38A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Rise Time :

32ns

Transistor Application :

POWER CONTROL

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Collector Emitter Voltage (VCEO) :

1.6V