IRG4BC20SD-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Packaging :

Tube

Reverse Recovery Time :

37ns

Terminal Position :

Single

Turn Off Time-Nom (toff) :

1780 ns

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOW CONDUCTION LOSS

Td (on/off) @ 25°C :

62ns/690ns

Number of Terminations :

2

Current - Collector (Ic) (Max) :

19A

Peak Reflow Temperature (Cel) :

225

Transistor Application :

POWER CONTROL

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Power - Max :

60W

Turn On Time :

99 ns

Voltage - Collector Emitter Breakdown (Max) :

600V

Switching Energy :

320μJ (on), 2.58mJ (off)

Number of Elements :

1

Surface Mount :

yes

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Pulsed (Icm) :

38A

Test Condition :

480V, 10A, 50 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2

Gate Charge :

27nC

Terminal Form :

Gull wing

Published :

1997

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)