IRG4BC20SD
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- Mfr.Part #
- IRG4BC20SD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 19A 60W TO220AB
- Stock
- 6,089
- In Stock ：
- 6,089
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Reverse Recovery Time :
- 37ns
- JESD-30 Code :
- R-PSFM-T3
- Td (on/off) @ 25°C :
- 62ns/690ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Test Condition :
- 480V, 10A, 50 Ω, 15V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Case Connection :
- COLLECTOR
- Power - Max :
- 60W
- Current - Collector (Ic) (Max) :
- 19A
- Qualification Status :
- Not Qualified
- Published :
- 1997
- Transistor Application :
- POWER CONTROL
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time :
- 99 ns
- Gate Charge :
- 27nC
- Switching Energy :
- 320μJ (on), 2.58mJ (off)
- Turn Off Time-Nom (toff) :
- 1780 ns
- Current - Collector Pulsed (Icm) :
- 38A
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 10A
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Datasheets
- IRG4BC20SD
IRG4BC20SD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20SD Bipolar Transistor Description
The IRG4BC20SD is a bipolar transistor with an ultra-soft recovery diode. It sees its wide applications in air-conditioners, PFC applications, and other home electronics appliances. It has low losses than regular MOSFET performance and fewer diode losses too. It has a wide range of operating temperatures of -55~150°C. It is capable of carrying a 7.0 A forward current at most.
IRG4BC20SD Bipolar Transistor Features
Extremely low voltage drop 1.4Vtyp. @ 10A
Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, and up to 4 kHz in brushless DC drives.
Very Tight Vce(on) distribution
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-220AB package
IGBTs optimized for specific application conditions
IRG4BC20SD Bipolar Transistor Applications
Air Conditioner
Dishwasher
Fan
PFC
Pump
Washing Machine
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