IRG4BC20KD-SPBF
- Mfr.Part #
- IRG4BC20KD-SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 16A 60W D2PAK
- Stock
- 10,046
- In Stock :
- 10,046
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Lead Free :
- Lead Free
- Fall Time-Max (tf) :
- 110ns
- Termination :
- SMD/SMT
- Number of Terminations :
- 2
- Rise Time :
- 37ns
- Power Dissipation :
- 60W
- Width :
- 4.826mm
- Gate-Emitter Voltage-Max :
- 20V
- Turn-Off Delay Time :
- 180 ns
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Mounting Type :
- Surface Mount
- Length :
- 10.668mm
- Element Configuration :
- Single
- Current Rating :
- 16A
- Base Part Number :
- IRG4BC20KD-SPBF
- Factory Lead Time :
- 18 Weeks
- Switching Energy :
- 340μJ (on), 300μJ (off)
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 60W
- Gate Charge :
- 34nC
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 2.27V
- Td (on/off) @ 25°C :
- 54ns/180ns
- Voltage - Rated DC :
- 600V
- Gate-Emitter Thr Voltage-Max :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 9A
- Collector Emitter Voltage (VCEO) :
- 2.8V
- Max Collector Current :
- 16A
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Turn Off Time-Nom (toff) :
- 380 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Time :
- 88 ns
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 54 ns
- JESD-609 Code :
- e3
- Forward Current :
- 7A
- Weight :
- 2G
- Collector Emitter Breakdown Voltage :
- 600V
- Published :
- 2000
- ECCN Code :
- EAR99
- Height :
- 4.83mm
- Transistor Element Material :
- SILICON
- Test Condition :
- 480V, 9A, 50 Ω, 15V
- Case Connection :
- COLLECTOR
- Max Forward Surge Current (Ifsm) :
- 32A
- Reverse Recovery Time :
- 37 ns
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Packaging :
- Tube
- Transistor Application :
- Motor Control
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Datasheets
- IRG4BC20KD-SPBF

IRG4BC20KD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20KD-SPBF Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
IRG4BC20KD-SPBF Features
·Fast: Optimized for medium operating
frequencies( 1-5 kHzin hard switching.>20 kHz in resonant mode).
·Generation 4 IGBT design provides tighter
parameter distribution and higher efficiencythan Generation3
·IGBT co-packaged with HEXFREDM ultrafast ultra-soft-recoveryanti-parallel diodes for use in bridge confiqurations
·Industry standard D2Pak package·Lead-Free
IRG4BC20KD-SPBF Application
? AC & DC Motor Controls
? General Purpose Inverters
? Robotics
? Servo Controls
? UPS
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