IRG4BC20KD-S
- Mfr.Part #
- IRG4BC20KD-S
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 16A 60W D2PAK
- Stock
- 1,291
- In Stock :
- 1,291
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Current - Collector (Ic) (Max) :
- 16A
- Terminal Form :
- Gull wing
- Input Type :
- Standard
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 225
- Published :
- 2000
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- R-PSSO-G2
- Power - Max :
- 60W
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Switching Energy :
- 340μJ (on), 300μJ (off)
- JESD-609 Code :
- e0
- Reverse Recovery Time :
- 37ns
- Turn Off Time-Nom (toff) :
- 380 ns
- Td (on/off) @ 25°C :
- 54ns/180ns
- Gate Charge :
- 34nC
- Surface Mount :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time :
- 88 ns
- Number of Elements :
- 1
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 9A
- Number of Terminations :
- 2
- Test Condition :
- 480V, 9A, 50 Ω, 15V
- Qualification Status :
- Not Qualified
- Transistor Application :
- Motor Control
- Current - Collector Pulsed (Icm) :
- 32A
- Datasheets
- IRG4BC20KD-S

IRG4BC20KD-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20KD-S Description
The IRG4BC20KD-S is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRG4BC20KD-S Features
-
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10μs @ 125°C, VGE = 15V
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation
-
IGBT co-packaged with HEXFREDTM utrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
-
Industry-standard D2Pak package
-
Lead-Free
IRG4BC20KD-S Applications
Industrial
General Uses
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