IRG4BC20FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

1.66V

Number of Pins :

3

Turn-Off Delay Time :

190 ns

Test Condition :

480V, 9A, 50 Ω, 15V

Transistor Element Material :

SILICON

Height :

15.24mm

Max Collector Current :

16A

Rise Time :

17ns

Turn Off Time-Nom (toff) :

640 ns

Number of Terminations :

3

Termination :

Through Hole

Td (on/off) @ 25°C :

24ns/190ns

Polarity/Channel Type :

N-Channel

Turn On Time :

41 ns

Packaging :

Tube

Mount :

Through Hole

REACH SVHC :

No SVHC

Width :

4.69mm

Collector Emitter Breakdown Voltage :

600V

Additional Feature :

FAST SWITCHING

Mounting Type :

Through Hole

Current Rating :

16A

Element Configuration :

Dual

Power Dissipation :

60W

Gate Charge :

27nC

Gate-Emitter Thr Voltage-Max :

6V

Gate-Emitter Voltage-Max :

20V

Lead Free :

Contains Lead, Lead Free

ECCN Code :

EAR99

Number of Elements :

1

Terminal Position :

Single

Max Power Dissipation :

60W

Current - Collector Pulsed (Icm) :

64A

Radiation Hardening :

No

Switching Energy :

70μJ (on), 600μJ (off)

Length :

10.5156mm

Collector Emitter Voltage (VCEO) :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A

Package / Case :

TO-220-3

Turn On Delay Time :

24 ns

Factory Lead Time :

16 Weeks

Published :

1997

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

600V

JEDEC-95 Code :

TO-220AB

Input Type :

Standard

Transistor Application :

POWER CONTROL