IRG4BC20FD-STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

43ns/240ns

Number of Terminations :

2

Qualification Status :

Not Qualified

Current - Collector Pulsed (Icm) :

64A

Switching Energy :

250μJ (on), 640μJ (off)

Turn Off Time-Nom (toff) :

610 ns

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Terminal Finish :

MATTE TIN OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Test Condition :

480V, 9A, 50 Ω, 15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Power - Max :

60W

Case Connection :

COLLECTOR

Gate Charge :

27nC

Published :

2000

Current - Collector (Ic) (Max) :

16A

Turn On Time :

63 ns

Input Type :

Standard

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Reverse Recovery Time :

37ns

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A

Voltage - Collector Emitter Breakdown (Max) :

600V

Terminal Form :

Gull wing