IRG4BC20FD-S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power - Max :

60W

Test Condition :

480V, 9A, 50 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

43ns/240ns

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

MATTE TIN OVER NICKEL

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

610 ns

Reverse Recovery Time :

37ns

Current - Collector (Ic) (Max) :

16A

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A

Number of Elements :

1

Current - Collector Pulsed (Icm) :

64A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Turn On Time :

63 ns

Voltage - Collector Emitter Breakdown (Max) :

600V

Surface Mount :

yes

Number of Terminations :

2

Gate Charge :

27nC

Polarity/Channel Type :

N-Channel

Published :

1997

JESD-30 Code :

R-PSSO-G2

Transistor Application :

POWER CONTROL

Switching Energy :

250μJ (on), 640μJ (off)

Terminal Form :

Gull wing

JESD-609 Code :

e3